3C-SiCHetero-epitaxiALLy grown on silicon compliancE substrates and new 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
CHALLENGE researchers study growth, processing and devices in cubic silicon carbide (3C-SiC). 3C-SiC technology can have a large impact on the future power device market and is particularly suited for implementation in hybrid electrical vehicles.
CHALLENGE is funded by the EU's H2020 framework programme for research and innovation.
A BOX OF VISUAL ELEMENTS
Advanced details for a distinctive identity
A circular shape for the silicon wafer; two letters for the cubic (3C) silicon carbide layer; the yellow color for the high purity of the bulk.
A complete guide to build an embracing project personality.
A SET OF KEY TOOLS AND TECNIQUES
The core value for creating multiple means of communication.
Images to tell a story
A system of harmonized icons to visually represent core ideas and topics.
An organized structure for project information
A single-page website to offer more interaction opportunities for visitors.
Original graphics to point out project details.